2SK3541PT Просмотр технического описания (PDF) - CHENMKO CO., LTD.

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2SK3541PT

N-Channel Enhancement Mode Field Effect Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( 2SK3541PT )

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 10µA

VDS = 30 V, VGS = 0 V

IGSSF

IGSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS = 0 V

30

TC=125°C

V

1

µA

0.5 mA

1

µA

-1

µA

ON CHARACTERISTICS

VGS(th)

Gate Threshold Voltage

VDS = 3V, ID = 100 µA

RDS(ON) Static Drain-Source On-Resistance VGS = 4.0 V, ID = 10 mA

gFS

Forward Transconductance

VGS = 2.5 V, ID = 1.0 mA

VDS = 3.0 V , ID = 10 m A

0.8

1.5

V

5.0 8.0

Ω

7.0 13

20

mS

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

ton

Turn-On Time

tr

toff

Turn-Off Time

tf

VDS = 5.0 V, VGS = 0 V,

f = 1.0 MHz

VDD = 5.0 V, RL = 500 Ω,

ID = 10 mA, VGS = 5.0 V,

RGEN = 10 Ω

VDD = 5.0 V, RL = 500 Ω,

ID = 10 mA, VGS = 5.0 V,

RGEN = 10 Ω

13

pF

9

4

15

nS

35

80

nS

80

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