2SK3539 Просмотр технического описания (PDF) - Panasonic Corporation
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2SK3539 Datasheet PDF : 3 Pages
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Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
For switching
■ Features
• High-speed switching
• Wide frequency band
• Gate protection diode built-in
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Drain-source voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
VDS
50
V
VGSO
±7
V
ID
100
mA
IDP
200
mA
PD
150
mW
Tch
150
°C
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 5F
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-Source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward trancfer admitance
Short-circuit forward transfer
capacitance (Common source)
VDSS
IDSS
IGSS
Vth
RDS(on)
Yfs
Ciss
ID = 10 µA, VGS = 0
VDS = 50 V, VGS = 0
VGS = ±7 V, VDS = 0
ID = 1.0 µA, VDS = 3 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VDS = 3 V, f = 1 kHz
VDS = 3 V, VGS = 0, f = 1 MHz
50
V
1.0
µA
±5.0 µA
0.9 1.2 1.5
V
8
15
Ω
6
12
20 60
mS
12
pF
Short-circuit output capacitance (Common source)
Coss
7
pF
Reverse transfer capacitance (Common source) Crss
3
pF
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω
200
ns
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω
200
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ton , toff test circuit
VOUT 470 Ω
90%
VGS = 3.0 V
50 Ω
VDD = 3 V
VIN
VOUT
10%
10%
90%
ton
toff
Publication date: January 2004
SJF00035BED
1
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