2SK2408 Просмотр технического описания (PDF) - Renesas Electronics
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2SK2408 Datasheet PDF : 7 Pages
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2SK2408
Static Drain to Source on State
Resistance vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6
1.2
ID = 10 A
0.8
2, 5 A
0.4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
1,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
500
200
100
50
0.2 0.5 1 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
400
VDS
300
200
VDD = 100 V
250 V
16
400 V
12
VGS
8
100
VDD = 400 V
ID = 7 A 4
250 V
100 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
TC = –25°C
25°C
10
75°C
5
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
5,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
100
Crss
10
5
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=•
•
30
V
200 PW = 2 µs, duty < 1%
td(off)
100
50
tf
20
10
5
0.2
tr
td(on)
0.5 1 2
5 10 20
Drain Current ID (A)
Rev.3.00 Apr 27, 2006 page 4 of 6
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