2SK1807 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

2SK1807

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1807

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

V(BR)DSS

900

—

voltage

Gate to source breakdown

voltage

V(BR)GSS

±30

—

Gate to source leak current IGSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off)

2.0

—

Static drain to source on state RDS(on)

—

3.0

resistance

Forward transfer admittance |yfs|

1.7 2.7

Input capacitance

Ciss

—

740

Output capacitance

Coss —

305

Reverse transfer capacitance Crss

—

150

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

—

15

—

60

—

100

—

80

—

0.9

Body to drain diode reverse trr

recovery time

—

800

Note 1. Pulse Test

Max Unit

—

V

—

V

±10 µA

250 µA

3.0 V

4.0 Ω

—

S

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

V

—

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 720 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A

VGS = 10 V*1

ID = 2 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2 A

VGS = 10 V

RL = 15 Ω

IF = 4 A, VGS = 0

IF = 4 A, VGS = 0,

diF / dt = 100 A / µs

See characteristic curves of 2SK1340

3

Share Link: