2SJ483 Просмотр технического описания (PDF) - Renesas Electronics

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2SJ483

Silicon P Channel MOS FET

Renesas Electronics 

2SJ483

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A)

• 4 V gate drive devices.

• Large current capacitance

ID = –5 A

Outline

RENESAS Package code: PRSS0003DC-A

(Package name: TO-92 Mod)

REJ03G0867-0200

(Previous: ADE-208-519)

Rev.2.00

Sep 07, 2005

D

321

G

S

1. Source

2. Drain

3. Gate

Rev.2.00 Sep 07, 2005 page 1 of 6

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