2SJ317NYTL Просмотр технического описания (PDF) - Renesas Electronics
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2SJ317NYTL Datasheet PDF : 7 Pages
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2SJ317
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
ID = –1 A
–0.2
–0.1 A
–0.1
–0.5 A
–0.2 A
0
0
–1
–2
–3
–4
–5
Gate to Source Voltage VGS (V)
2000
1000
500
Reverse Recovery Time vs.
Recovery Time
200
100
50
20
–0.1 –0.2
di / dt = 10 A / µs
VGS = 0
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
–25
–10
VDD = –10 V
ID = –2 A
–20 Pulse test
–8
–15
VGS
–6
–10
–4
–5
–2
VDS
0
0
0
2
4
6
8 10
Gate Charge Qg (nc)
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
0.8
ID = –2 A
0.6
–1 A –0.5 A
VGS = –2.5 V
0.4
0.2
–4 V
–1 A, 0.5 A –2 A
0
–25 0
25 50 75 100
Case Temperature Tc (°C)
Switching Time vs. Drain Current
2000
1000
tf
td(off)
500
tr
VGS = –4 V
200 VDD = –10 V
PW = 5 µs
Duty cycle ≤ 1 %
100
td(on)
50
–0.05 –0.1 –0.2 –0.5 –1 –2
–5
Drain Current ID (A)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Coss
VGS = 0
f = 1 MHz
Ciss
20
Crss
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain to Source Voltage VDS (V)
Rev.2.00 Sep 07, 2005 page 4 of 6
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