DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SJ317 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
2SJ317
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SJ317 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Maximun Power Dissipation Curve
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
2SJ317
–10
–3
–1
–0.3
Maximun Safe Operation Area
Operation in this Area
is limited by RDS(on)
PW = 1 ms
1 shot
DC
(TcO=2p5e°rCat)ion
–0.1
–0.03
–0.01 Ta = 25°C
–0.1 –0.3 –1.0 –3
–10 –30 –100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
–5
–5
–4
–2.5
–3
–4
Pulse test
–3
–2
–2
–1.5
–1
VGS = –1 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V DS (V)
Typical Forward Transfer Characteristics
–5
Ta = –25°C
–4
25°C
–3
75°C
–2
–1
VDS = –5 V
Pulse test
0
–1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]