2SC5100 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
Номер в каталоге
Компоненты Описание
производитель
2SC5100 Datasheet PDF : 4 Pages
| |||
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.3 A
ICBO
Collector cut-off current
VCB=160V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IE=-0.5A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A;RL=10Ω
IB1=-IB2=0.4A
VCC=40V
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SC5100
MIN TYP. MAX UNIT
120
V
0.5
V
10 μA
10 μA
50
180
20
MHz
200
pF
0.13
μs
3.50
μs
0.32
μs
2
Share Link: 