2SC4953 Просмотр технического описания (PDF) - Panasonic Corporation
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Компоненты Описание
производитель
2SC4953 Datasheet PDF : 2 Pages
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Power Transistors
IC — VCE
5.0
TC=25˚C
4.5
IB=500mA
4.0
450mA
400mA
350mA
3.5
300mA
3.0
250mA
200mA
2.5
150mA
2.0
100mA
1.5
50mA
1.0
0.5
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
fT — IC
100
VCE=10V
f=1MHz
30
TC=25˚C
10
3
1
0.3
0.1
0.01 0.03
0.1
0.3
1
Collector current IC (A)
Area of safe operation, reverse bias ASO
4.0
IC/IB=5
3.5
Lcoil=100µH
TC=25˚C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
2SC4953
IC — VCE(sat)
8
IC/IB=5
7
6
TC=–25˚C
25˚C
5
125˚C
4
3
2
1
0
0
0.5 1.0 1.5 2.0 2.5
Collector to emitter saturation voltage VCE(sat) (V)
hFE — IC
300
VCE=5V
100
TC=125˚C
25˚C
30
–25˚C
10
3
0.003 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=10(2IB1=–IB2)
VCC=200V
10
TC=25˚C
3
tstg
1
ton
0.3
tf
0.1
0.03
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
Ta=25˚C
30
Ta=85˚C
10
ICP
3
IC 1s
t=1ms
10ms
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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