2SB1440 Просмотр технического описания (PDF) - Willas Electronic Corp.

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2SB1440

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

SOT-89 Plastic-Encapsulate Transistors

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

2SB1440 THRU

FM1200-M+

Pb Free Product

Features

• Batch process design, excellent power dissipation offers

O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing c.o1d8e 1su(f4fix.6"H0")

Mechanical data

.173(4.39)

• Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

.061REF

Method 2026

• Polarity : Indicated by cathode b(a1n.d55)REF

• Mounting Position : Any

• Weight : Approximated 0.011 gram

Package outline

S O T- 8 9 SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

.063(1.60)

.055(1.40)

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

.167(4.25)

RATINGS

M.a1rk5in4g(C3o.d9e1)

Maximum Recurrent Peak Reverse Voltage

.102(2.60)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN

12

13

1.4091(21.35 0) 16

18

10

115 120

VRR.M023(02.058) 30

40

50

60

80

100

150

200 Vo

Maximum RMS Voltage

VRM.0S 16(01.440) 21

28

35

42

56

70

105

140 Vo

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

150

200 Vo

Maximum Average Forward Rectified Current

IO

1.0

Am

Peak Forwar.d0S4ur7ge(1Cu.2rre)nt 8.3 ms single half sine-wave IFSM

superimpose.d0o3n r1at(e0d.lo8a)d (JEDEC method)

30

Am

Typical Thermal Resistance (Note 2)

RΘJA

40

℃/

Typical Junction Capacitance (Note 1)

CJ

120

P

Operating Temperature Range

TJ

-55 to +125

-55 to +150

℃

Storage Temperature Range

.060TYP

TSTG

.197(0.52)

- 65 to +175

℃

(1.50)TYP

.013(0.32)

.017(0.44)

CHARACTERISTICS

.118TSYYMPBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM.10801-M4H(F0M.131050)-MH FM1150-MH FM1200-MH UN

Maximum Forward Voltage at 1.0A DC

VF

(3.0)TYP

Maximum Average Reverse Current at @T A=25℃

IR

0.50

0.70

0.85

0.5

0.9

0.92 Vo

mA

Rated DC Blocking Voltage

@T A=125℃

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-06

2012-0

Dimensions in inches and (millimeters)

WILLAS ELECTRROevN.ICC CORP.

WILLAS ELECTRONIC CORP.

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