2MBI150VB-120-50 Просмотр технического описания (PDF) - Fuji Electric
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производитель
2MBI150VB-120-50 Datasheet PDF : 6 Pages
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2MBI150VB-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward Current vs. Forward Voltage (typ.)
chip
350
300
250
Tj=25°C
200
150
100
125°C
150°C
50
0
0
1
2
3
Forward on voltage: VF [V]
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=4.2Ω, Tj=150°C
1000
Irr
trr
100
10
0
100
200
300
400
Forward current: IF [A]
FWD safe operating area (max.)
Tj=150°C
400
300
Pmax=180kW
200
100
0
0
500
1000
1500
Collector-Emitter voltage: VCE [V]
(Main terminals)
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=4.2Ω, Tj=125°C
1000
Irr
trr
100
10
0
100
200
300
400
Forward current: IF [A]
Transient Thermal Resistance (max.)
1
FWD
0.1
IGBT
0.01
0.001
τ(i)
Rth(i)
[°C/W]
0.001
[sec]
IGBT
FWD
0.001
0.01316
0.01880
0.01
0.019 0.050
0.03129 0.05397
0.04470 0.07710
0.1
0.063
0.04188
0.05983
1
Pulse Width : Pw [sec]
4
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