TB0640L Просмотр технического описания (PDF) - Diodes Incorporated.
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TB0640L Datasheet PDF : 5 Pages
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TB0640L - TB3500L
Electrical Characteristics @TA = 25°C unless otherwise specified
Notes:
Symbol
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current (Note 5)
On state voltage
Peak pulse current
Off-state capacitance (Note 6)
5. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
exceed 30ms.
6. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
IPP
IBO
IH
IBR
IDRM
VT
V
VBR
VDRM
VBO
100
1.2
10
1
0.1
0.01
VDRM = 50V
1.15
1.1
1.05
1
0.95
0.001
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
0.9
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
TB0640L - TB3500L
Document number: DS30359 Rev. 9 - 2
3 of 5
www.diodes.com
May 2011
© Diodes Incorporated
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