MMDT5401(2013) Просмотр технического описания (PDF) - Diodes Incorporated.
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MMDT5401 Datasheet PDF : 5 Pages
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MMDT5401
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-160
-150
-6
-200
Unit
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Notes 6 & 7)
(Note 5)
(Notes 6 & 7)
(Note 8)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
200
320
625
390
140
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Base-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
Typ
Max Unit
Test Condition
BVCBO -160
V IC = -100µA, IE = 0
BVCEO -150
V IC = -1mA, IB = 0
BVEBO
-6
V IE = -100µA, IC = 0
ICBO
-50
nA VCB = -120V, IE = 0
-50
µA VCB = -120V, IE = 0, TA = +100°C
IEBO
-50
nA VEB = -5V, IC = 0
50
hFE
60
50
VCE(sat)
VBE(sat)
240
-0.2
-0.5
-1.0
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Cobo
hfe
40
fT
100
NF
6.0
pF VCB = -10V, f = 1.0MHz, IE = 0
200
IC = -1mA, VCE = -10V, f = 1.0MHz
300
MHz IC = -10mA, VCE = -10V, f = 100MHz
8.0
dB
VCE = -5.0V, IC = -200µA,
RS = 10Ω f = 1.0kHz
Notes:
5. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted 25mm X 25mm 2oz copper.
7. Maximum combined dissipation.
8. Thermal resistance from junction to the top of package.
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
MMDT5401
Document Number: DS30169 Rev: 10 - 2
2 of 5
www.diodes.com
April 2013
© Diodes Incorporated
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