MPC17529 Просмотр технического описания (PDF) - Freescale Semiconductor
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MPC17529 Datasheet PDF : 12 Pages
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APPLICATIONS
FUNCTIONAL TERMINAL DESCRIPTION
This paragraph is boilerplate - you may add to it but, can not change wording. You may change numeric values
APPLICATIONS
TYPICAL APPLICATION
Figure 7 shows a typical application for the 17529. When
applying the gate voltage to the CRES terminal from an
external source, be sure to connect it via a resistor equal to,
or greater than, RG = VCRES / 0.02 Ω.
The internal charge pump of this device is generated from
the VDD supply; therefore, care must be taken to provide
sufficient gate-source voltage for the high-side MOSFETs
when VM >> VDD (e.g., VM = 5.0 V, VDD = 3.0 V), in order to
ensure full enhancement of the high-side MOSFET channels.
VCRES < 14 V
NC
NC
NC
RG > VCRES/0.02 Ω NC
RG
0.01 µF
MCU
5.0 V
17529
C1L
C1H
C2L
C2H
CRES
VDD VM
OUT1A
OUT1B
IN1A
OUT2A
IN1B
IN2A
IN2B
OUT2B
OE GND
NC = No Connect
Figure 7. 17529 Typical Application Diagram
CONDUCTED ELECTROMOTIVE FORCE (CEMF)
SNUBBING TECHNIQUES
Care must be taken to protect the IC from potentially
damaging CEMF spikes induced when commutating currents
in inductive loads. Typical practice is to provide snubbing of
voltage transients by placing a capacitor or zener at the
supply terminal (VM) (see Figure 8).
5.0 V
5.0 V
175XX
VDD VM
C1L
C1H
C2L
C2H
OUT
CRES
OUT
GND
5.0 V 5.0 V
175XX
VDD VM
C1L
C1H
C2L
C2H
OUT
CRES
OUT
GND
PCB LAYOUT
When designing the printed circuit board (PCB), connect
sufficient capacitance between power supply and ground
terminals to ensure proper filtering from transients. For all
high-current paths, use wide copper traces and shortest
possible distances.
Figure 8. CEMF Snubbing Techniques
Analog Integrated Circuit Device Data
Freescale Semiconductor
17529
9
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