12N60G-TF3-T Просмотр технического описания (PDF) - Unisonic Technologies

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12N60G-TF3-T

N-CHANNEL POWER MOSFET / 12A, 600V

Unisonic Technologies 

12N60

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD = 300V, ID = 12A,

RG = 25Ω (Note 1, 2)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QGD

VDS= 480V,ID= 12A,

VGS= 10 V (Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

VSD

VGS = 0 V, IS = 12A

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS = 0 V, IS = 12A,

Reverse Recovery Charge

QRR

dIF/dt = 100 A/µs (Note 1)

Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature.

Power MOSFET

MIN TYP MAX UNIT

30 70 ns

115 240 ns

95 200 ns

85 180 ns

42 54 nC

8.6

nC

21

nC

1.4 V

12 A

48 A

380

ns

3.5

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 7

QW-R502-170.I

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