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12N60G-TF1-T

N-CHANNEL POWER MOSFET / 12A, 600V

Unisonic Technologies 

12N60

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

12

A

Drain Current

Continuous

ID

Pulsed (Note 2)

IDM

12

A

48

A

Single Pulsed (Note 3)

Avalanche Energy

EAS

Repetitive (Note 2)

EAR

790

mJ

24

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220 / TO-262

Power Dissipation

TO-220F / TO-220F1

PD

225

W

51

W

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220 / TO-262

TO-220F/TO-220F1

SYMBOL

θJA

θJC

RATING

62.5

0.56

2.43

„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

UNIT

°C/W

°C/W

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0 V, ID = 250 µA

600

V

Drain-Source Leakage Current

Gate-Source Leakage Current

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

IDSS

VDS = 600 V, VGS = 0 V

IGSS

VGS = ±30 V, VDS = 0 V

△BVDSS/△TJ ID=250µA, Referenced to 25°C

1 µA

±100 nA

0.7

V/°C

Gate Threshold Voltage

Static Drain-Source On-State Resistance

VGS(TH)

RDS(ON)

VDS = VGS, ID = 250μA

VGS = 10V, ID = 6.0A

2.0

4.0 V

0.6 0.8 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS = 25 V, VGS = 0 V,

f = 1MHz

1480 1900 pF

200 270 pF

25 35 pF

Gate Resistance

RG

VDS =0V, VGS =0V, f =1MHz

0.2

1.2 Ω

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 7

QW-R502-170.I

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