11N60S5(2009) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

11N60S5
(Rev.:2009)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60S5

SPI11N60S5

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Inverse diode continuous

forward current

IS

TC=25°C

-

-

11 A

Inverse diode direct current,

ISM

pulsed

-

-

22

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

VSD

trr

Qrr

VGS=0V, IF=IS

VR=350V, IF=IS ,

diF/dt=100A/µs

-

1

1.2 V

-

650 1105 ns

-

7.9

- µC

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

Value

typ.

typ.

Thermal resistance

Thermal capacitance

Rth1

Rth2

Rth3

Rth4

Rth5

Rth6

0.015

0.03

0.056

0.197

0.216

0.083

K/W

Cth1

Cth2

Cth3

Cth4

Cth5

Cth6

0.0001878

0.0007106

0.000988

0.002791

0.007285

0.063

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th ,n

Tamb

Rev. 2.7

Page 4

2009-11-30

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