GS6B60KD Просмотр технического описания (PDF) - International Rectifier

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производитель

GS6B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

20

18

16

14

12

10

8

6

4

2

0

5

ICE = 3.0A

ICE = 5.0A

ICE = 10A

10

15

20

VGE (V)

Fig. 9 - Typical VCE vs. VGE

TJ = -40°C

IRG/B/S/SL6B60KD

20

18

16

14

12

10

8

6

4

2

0

5

ICE = 3.0A

ICE = 5.0A

ICE = 10A

10

15

20

VGE (V)

Fig. 10 - Typical VCE vs. VGE

TJ = 25°C

20

18

16

14

12

10

8

6

4

2

0

5

ICE = 3.0A

ICE = 5.0A

ICE = 10A

10

15

20

VGE (V)

Fig. 11 - Typical VCE vs. VGE

TJ = 150°C

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40

35

TJ = 25°C

TJ = 150°C

30

25

20

15

10 TJ = 150°C

5

0

0

5

TJ = 25°C

10

15

20

VGE (V)

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

5

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