GS6B60KD Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

производитель

GS6B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG/B/S/SL6B60KD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Ref.Fig.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage

VCE(on)

Collector-to-Emitter Saturation Voltage

––– 0.3 ––– V/°C

1.5 1.80 2.20 V

––– 2.20 2.50

VGE = 0V, IC = 1.0mA, (25°C-150°C)

IC = 5.0A, VGE = 15V

5, 6,7

IC = 5.0A,VGE = 15V,

TJ = 150°C 9,10,11

VGE(th)

Gate Threshold Voltage

3.5 4.5 5.5 V VCE = VGE, IC = 250µA

9,10,11

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12

gfe

Forward Transconductance

––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs

ICES

Zero Gate Voltage Collector Current

––– 1.0 150 µA VGE = 0V, VCE = 600V

––– 200 500

VGE = 0V, VCE = 600V, TJ = 150°C

VFM

Diode Forward Voltage Drop

––– 1.25 1.45

IC = 5.0A

8

––– 1.20 1.40 V IC = 5.0A TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Ref.Fig.

Qg

Qge

Qgc

Eon

Eoff

Etot

td(on)

tr

td(off)

tf

Eon

Eoff

Etot

td(on)

tr

td(off)

tf

Cies

Coes

Cres

RBSOA

SCSOA

Erec

trr

Irr

Total Gate Charge (turn-on)

––– 18.2 –––

IC = 5.0A

Gate - Emitter Charge (turn-on)

––– 1.9 ––– nC VCC = 400V

CT1

Gate - Collector Charge (turn-on)

––– 9.2 –––

VGE = 15V

Turn-On Switching Loss

––– 110 210 µJ IC = 5.0A, VCC = 400V

CT4

Turn-Off Switching Loss

––– 135 245

VGE = 15V,RG = 100Ω, L =1.4mH

Total Switching Loss

––– 245 455

Ls = 150nH

TJ = 25°C ƒ

Turn-On Delay Time

––– 25 34

IC = 5.0A, VCC = 400V

CT4

Rise Time

––– 17 26

VGE = 15V, RG = 100Ω L =1.4mH

Turn-Off Delay Time

––– 215 230 ns Ls = 150nH, TJ = 25°C

Fall Time

––– 13.2 22

Turn-On Switching Loss

Turn-Off Switching Loss

––– 150 260

IC = 5.0A, VCC = 400V

––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH

CT4

13,15

Total Switching Loss

––– 340 560

Ls = 150nH

TJ = 150°C ƒ WF1WF2

Turn-On Delay Time

––– 28 37

IC = 5.0A, VCC = 400V

14, 16

Rise Time

––– 17 26

VGE = 15V, RG = 100Ω L =1.4mH

CT4

Turn-Off Delay Time

––– 240 255 ns Ls = 150nH, TJ = 150°C

WF1

Fall Time

––– 18 27

WF2

Input Capacitance

––– 290 –––

VGE = 0V

Output Capacitance

––– 34 ––– pF VCC = 30V

Reverse Transfer Capacitance

––– 10 –––

f = 1.0MHz

Reverse Bias Safe Operting Area

FULL SQUARE

TJ = 150°C, IC = 26A, Vp =600V

4

VCC = 500V, VGE = +15V to 0V,RG = 100Ω CT2

Short Circuit Safe Operting Area

10

––– –––

µs

TJ = 150°C, Vp =600V, RG = 100Ω

VCC = 360V, VGE = +15V to 0V

CT3

WF4

Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C

Diode Reverse Recovery time

––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH

17,18,19

20, 21

Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH CT4,WF3

Note  to ƒ are on page 15

2

www.irf.com

Share Link: