Z0103MA(2009) Просмотр технического описания (PDF) - NXP Semiconductors.
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Z0103MA Datasheet PDF : 12 Pages
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NXP Semiconductors
Z0103MA
Logic level four-quadrant triac
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T2
main terminal 2
2
G
gate
3
T1
main terminal 1
Simplified outline
Graphic symbol
T2
T1
G
sym051
3. Ordering information
321
SOT54
(TO-92)
Table 3. Ordering information
Type number
Package
Name
Description
Z0103MA
TO-92
plastic single-ended leaded (through hole) package; 3 leads
4. Limiting values
Version
SOT54
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
dIT/dt
IGM
PGM
Tstg
Tj
ITSM
RMS on-state current
rate of rise of on-state
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
full sine wave; Tlead ≤ 38 °C; see Figure 4 and 1
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2+ G+
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2- G+
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2+ G-
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2- G-
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
see Figure 2 and 3
I2t
PG(AV)
I2t for fusing
average gate power
tp = 10 ms; sin-wave pulse
Min Max Unit
-
600 V
-
1
A
-
50
A/µs
-
20
A/µs
-
50
A/µs
-
50
A/µs
-
1
A
-
2
W
-40 150 °C
-
125 °C
-
8.5 A
-
8
A
-
0.32 A2s
-
0.1 W
Z0103MA_3
Product data sheet
Rev. 03 — 5 August 2009
© NXP B.V. 2009. All rights reserved.
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