BCW72LT1G(2009) Просмотр технического описания (PDF) - ON Semiconductor
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BCW72LT1G Datasheet PDF : 7 Pages
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BCW72LT1G
TYPICAL DYNAMIC CHARACTERISTICS
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
tr
td @ VBE(off) = 0.5 Vdc
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn−On Time
50 70 100
1000
700
500
ts
300
200
100
tf
70
50
30 VCC = 3.0 V
20
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
1.0 2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 14. Turn−Off Time
50 70 100
500
TJ = 25°C
f = 100 MHz
300
200
VCE = 20 V
5.0 V
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 15. Current−Gain — Bandwidth Product
10
TJ = 25°C
7.0
f = 1.0 MHz
Cib
5.0
Cob
3.0
2.0
1.0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Capacitance
20
VCE = 10 Vdc
10
7.0
hfe ≈ 200 @ IC = 1.0 mA
f = 1.0 kHz
TA = 25°C
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50
hfe ≈ 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
2.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
50 100
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