ZXMD65P02N8TA Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMD65P02N8TA

DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMD65P02N8

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (1)(3)

DYNAMIC (3)

V(BR)DSS -20

IDSS

IGSS

VGS(th) -0.7

RDS(on)

gfs

V

-1

µA

-100 nA

V

0.050 Ω

0.080 Ω

8.5

S

ID=-250µA, VGS=0V

VDS=-16V, VGS=0V

VGS=±12V, VDS=0V

VIDG=S-250µA, VDS=

VGS=-4.5V, ID=-2.9A

VGS=-2.5V, ID=-1.5A

VDS=-10V,ID=-2.9A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

960

pF

VDS=-15 V, VGS=0V,

480

pF f=1MHz

240

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

NOTES:

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

6.6

29.9

57.9

63.2

20

1.8

10

ns

ns

VDD =-10V, ID=-2.9A

ns

RG=6.0Ω, VGS=-5V

ns

nC

VDS=-10V,VGS=-4.5V

nC ID=-2.9A

nC

0.95 V

39.2

ns

28.8

nC

Tj=25°C, IS=-2.9A,

VGS=0V

Tj=25°C, IF=-2.9A,

di/dt= 100A/µs

ISSUE 1 - JULY 2004

3

SEMICONDUCTORS

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