ZXMD65P02N8TA Просмотр технического описания (PDF) - Zetex => Diodes
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ZXMD65P02N8TA Datasheet PDF : 4 Pages
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ZXMD65P02N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
Gate- Source Voltage
Continuous
Drain
Current
VGS=-4.5V;
VGS=-4.5V;
VGS=-4.5V;
TA=25°C
TA=70°C
TA=25°C
(b)(d)
(b)(d)
(a)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Operating and Storage Temperature Range
Tj:Tstg
LIMIT
-20
±12
-5.1
-4.1
-4.0
-18
-3.1
-18
1.25
10
1.75
14
2.0
16
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
RθJA
RθJA
RθJA
100
°C/W
71.4
°C/W
62.5
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature.
(d) For device with one active die.
SEMICONDUCTORS
2
ISSUE 1 - JULY 2004
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