ZXMD65P02N8(2001) Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMD65P02N8
(Rev.:2001)

DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMD65P02N8

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNI CONDITIONS.

T

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS -20

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

-0.7

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

V ID=-250µA, VGS=0V

-1

µA VDS=-16V, VGS=0V

-100

nA VGS=±12V, VDS=0V

V

0.050 Ω

0.080 Ω

I =-250µA,

D

VDS=

VGS

VGS=-4.5V, ID=-2.9A

VGS=-2.5V, ID=-1.5A

8.5

S VDS=-10V,ID=-2.9A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

960

pF

VDS=-15 V, VGS=0V,

480

pF f=1MHz

240

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

6.6

29.9

57.9

63.2

20

1.8

10

ns

ns VDD =-10V, ID=-2.9A

ns RG=6.0Ω, VGS=-5V

ns

nC

VDS=-10V,VGS=-4.5V

nC ID=-2.9A

nC

Diode Forward Voltage (1)

VSD

0.95

Reverse Recovery Time (3)

trr

39.2

Reverse Recovery Charge(3)

Qrr

28.8

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V Tj=25°C, IS=-2.9A,

VGS=0V

ns Tj=25°C, IF=-2.9A,

di/dt= 100A/µs

nC

PROVISIONAL ISSUE A - MAY 2001

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