ZXMD65P02N8(2001) Просмотр технического описания (PDF) - Zetex => Diodes
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ZXMD65P02N8 Datasheet PDF : 4 Pages
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ZXMD65P02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current VGS=-4.5V; TA=25°C (b)(d)
VGS=-4.5V; TA=70°C (b)(d)
VGS=-4.5V; TA=25°C (a)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
LIMIT
-20
±12
-5.1
-4.1
-4.0
-18
-3.1
-18
1.25
10
1.75
14
2.0
16
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
RθJA
RθJA
RθJA
100
°C/W
71.4
°C/W
62.5
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
(d) For device with one active die.
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - MAY 2001
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