ZXMD63P02X Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMD63P02X

DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMD63P02X

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

V(BR)DSS -20

IDSS

IGSS

VGS(th) -0.7

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (3)

DYNAMIC (3)

gfs

1.3

V

ID=-250µA, VGS=0V

-1

µA VDS=-20V, VGS=0V

±100 nA VGS=± 12V, VDS=0V

V

ID=-250µA, VDS=

VGS

0.27

Ω

VGS=-4.5V, ID=-1.2A

0.40

Ω

VGS=-2.7V, ID=-0.6A

S

VDS=-10V,ID=-0.6A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

290

pF

VDS=-15 V, VGS=0V,

120

pF f=1MHz

50

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

3.4

9.6

16.4

20.4

5.25

1.0

2.25

ns

ns VDD =-10V, ID=-1.2A

ns

RG=6.0Ω, RD=8.3Ω

(Refer to test

ns circuit)

nC

V D S= -1 6 V , V G S= -4 . 5 V ,

nC ID=-1.2A

(Refer to test

nC circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

-0.95 V

Tj=25°C, IS=-1.2A,

V G S= 0V

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

21.7

9.6

ns Tj=25°C, IF=-1.2A,

di/dt= 100A/µs

nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JUNE 1999

44

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