WFP3205 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFP3205 Datasheet PDF : 7 Pages
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WFP3205
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
Drain cut -off current
IDSS
VDS=50V,VGS=0V
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
△BVDSS/
△TJ
ID=250 µA,VGS=0V
ID=1mA,
Referenced to 25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
Drain -source ON resistance
RDS(ON) VGS=10V,ID=60A
Forward Transconductance
gfs
VDS=25V,ID=60A
Input capacitance
Ciss
VDS=25V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS=0V,
f=1MHz
Rise time
tr
VDD=28V,
Switching time
Turn-on time
Fall time
ton
ID=60A
tf
RG=4.5Ω
Turn-off time
toff
VGS=10V (Note4,5)
Total gate charge(gate-source
plus gate-drain)
VDS=44V,
Qg
VGS=10V,
Gate-source charge
Qgs
ID=60A
Gate-drain("miller") Charge
Qgd
(Note4,5)
Min Type Max
-
-
±100
±30
-
-
-
-
10
50
-
-
Unit
nA
V
µA
V
- 0.057 -
V/℃
2
-
4
V
-
-
8.0
mΩ
44
-
-
S
-
3247
-
-
211
-
pF
-
781
-
-
101
-
-
14
-
ns
-
65
-
-
50
-
-
133 146
nC
-
-
35
-
-
54
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
110
A
Pulse drain reverse current
IDRP
-
-
-
390
A
Forward voltage(diode)
VDSF
IDR=60A,VGS=0V
-
-
1.4
V
Reverse recovery time
Reverse recovery charge
trr
IDR=60A,VGS=0V,
Qrr
dIDR / dt =100 A / µs
-
69
104
ns
-
143
215
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=138uH IAS=60A,,RG=25Ω,Starting TJ=25℃
3.ISD≤60A,di/dt≤207A/us,VDD<BVDSS, TJ≤150℃
4.Pulse Test:Pulse Width≤400us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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