WFP50N06 Просмотр технического описания (PDF) - Wisdom technologies
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WFP50N06 Datasheet PDF : 7 Pages
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WFP50N06
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
60
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
ID = 250uA, referenced to 25 °C
-
VDS = 60V, VGS = 0V
-
IDSS Drain-Source Leakage Current
VDS = 48V, TC = 125 °C
-
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
-
IGSS
Gate-source Leakage, Reverse
VGS = -20V, VDS = 0V
-
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 25.0A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
Coss Output Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
Crss Reverse Transfer Capacitance
-
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
-
VDD =30V, ID =25.0A, RG =25Ω
-
(Note 4, 5)
-
-
-
VDS =48V, VGS =10V, ID =50A
-
Qgd
Gate-Drain Charge(Miller Charge)
(Note 4, 5)
-
Typ Max Units
-
-
V
0.07
-
V/°C
-
10
uA
-
100
uA
-
100
nA
-
-100
nA
-
4.0
V
0.018 0.022
Ω
1050 1365
460 600
pF
70
90
20
50
100 210
ns
80
170
85
180
32
42
8
-
nC
12
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =50A, VGS =0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=50A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 230uH, IAS =50A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
50
70
Max.
50
200
1.5
-
-
Unit.
A
V
ns
uC
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