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WFP50N06

N-Channel MOSFET

Wisdom technologies 

Wisdom Semiconductor

WFP50N06

N-Channel MOSFET

Features

■ RDS(on) (Max 0.022 Ω )@VGS=10V

■ Gate Charge (Typical 32nC)

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (175°C)

General Description

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switch mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge topology.

Symbol

1. Gate{

{ 2. Drain

●

◀▲

●

●

{ 3. Source

TO-220

123

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

EAR

dv/dt

PD

TSTG, TJ

TL

Parameter

Drain to Source Voltage

Continuous Drain Current(@TC = 25°C)

Continuous Drain Current(@TC = 100°C)

Drain Current Pulsed

Gate to Source Voltage

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation(@TC = 25 °C)

Derating Factor above 25 °C

Operating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case to Sink

Thermal Resistance, Junction-to-Ambient

Min.

-

-

-

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Value

60

50

35

200

±20

493

12.0

7.0

120

0.8

- 55 ~ 175

300

Value

Typ.

-

0.5

-

Max.

1.24

-

62.5

Units

V

A

A

A

V

mJ

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

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