WFF830 Просмотр технического описания (PDF) - Unspecified
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WFF830 Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.50
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.5 A
2.0 --
4.0
V
-- 1.15 1.40
Ω
(Note 4)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 680 900
pF
--
85
110
pF
--
15
20
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 5.0 A,
RG = 25 Ω
--
20
50
ns
--
40
90
ns
--
90 190
ns
--
45 100
ns
(Note 4, 5)
VDS = 400 V, ID = 5.0A,
--
25
33
nC
VGS = 10 V
--
5
--
nC
--
10
--
nC
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.0 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5.0 A,
-- 250
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
-- 2.2
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.0mH, IAS = 5.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
(Note 4)
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