DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MUBW50-12A8 Просмотр технического описания (PDF) - IXYS CORPORATION

Номер в каталоге
Компоненты Описание
производитель
MUBW50-12A8
IXYS
IXYS CORPORATION IXYS
MUBW50-12A8 Datasheet PDF : 4 Pages
1 2 3 4
MUBW 50-12 A8
Output Inverter T1 - T6
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continuous
1200
V
± 20
V
TC = 25°C
TC = 80°C
85
A
60
A
VGE = ±15 V; RG = 22 ; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 100
A
VCEK VCES
VCE = VCES; VGE = ±15 V; RG = 22 ; TVJ = 125°C
non-repetitive
10
µs
TC = 25°C
350
W
Symbol
VCE(sat)
VGE(th)
ICES
I
GES
td(on)
tr
t
d(off)
tf
E
on
Eoff
Cies
Q
Gon
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 2 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
V = 0 V; V = ± 20 V
CE
GE
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 22
2.2 2.6 V
2.5
V
4.5
6.5 V
3.7 mA
3.1
mA
200 nA
100
ns
70
ns
500
ns
70
ns
7.6
mJ
5.6
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
V = 600 V; V = 15 V; I = 50 A
CE
GE
C
(per IGBT)
3.3
nF
230
nC
0.35 K/W
Output Inverter D1 - D6
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
110
A
70
A
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
T1-T6
V0 = 1.5 V; R0 = 20 m
T7
V0 = 1.5 V; R0 = 40 m
Diode (typ. at TJ = 125°C)
D1-D6
V0 = 1.25 V; R0 = 5.5 m
D7
V0 = 1.3 V; R0 = 30 m
D11-D16
V0 = 0.85 V; R0 = 5 m
Thermal Response
IGBT (typ.)
T1-T6
Cth1 = 0.216 J/K; Rth1 = 0.264 K/W
Cth2 = 1.338 J/K; Rth2 = 0.086 K/W
T7
Cth1 = 0.134 J/K; Rth1 = 0.424 K/W
Cth2 = 0.986 J/K; Rth2 = 0.126 K/W
Diode (typ.)
D1-D6
Cth1 = 0.138 J/K; Rth1 = 0.48 K/W
Cth2 = 0.957 J/K; Rth2 = 0.13 K/W
D7
Cth1 = 0.038 J/K; Rth1 = 1.725 K/W
Cth2 = 0.439 J/K; Rth2 = 0.375 K/W
D11-D16
Cth1 = 0.086 J/K; Rth1 = 0.738 K/W
Cth2 = 0.621 J/K; Rth2 = 0.202 K/W
Symbol
VF
IRM
trr
R
thJC
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
2.1 2.5 V
1.5
V
41
A
200
ns
0.61 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2 -4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]