VND7N04-E Просмотр технического описания (PDF) - STMicroelectronics

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VND7N04-E

"OMNIFET": Fully autoprotected power MOSFET

STMicroelectronics 

VND7N04, VND7N04-1, VNK7N04FM

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Protection features

Protection features

During normal operation, the Input pin is electrically connected to the gate of the internal

power MOSFET. The device then behaves like a standard power MOSFET and can be used

as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small

DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:

q Overvoltage clamp protection: internally set at 42 V, along with the rugged avalanche

characteristics of the Power MOSFET stage give this device unrivalled ruggedness and

energy handling capability. This feature is mainly important when driving inductive

loads.

q Linear current limiter circuit: limits the drain current Id to Ilim whatever the Input pin

voltage. When the current limiter is active, the device operates in the linear region, so

power dissipation may exceed the capability of the heatsink. Both case and junction

temperatures increase, and if this phase lasts long enough, junction temperature may

reach the overtemperature threshold Tjsh.

q Overtemperature and short circuit protection: these are based on sensing the chip

temperature and are not dependent on the input voltage. The location of the sensing

element on the chip in the power stage area ensures fast, accurate detection of the

junction temperature. Overtemperature cutout occurs at minimum 150 °C. The device

is automatically restarted when the chip temperature falls below 135 °C.

q Status feedback: in the case of an overtemperature fault condition, a Status Feedback

is provided through the Input pin. The internal protection circuit disconnects the input

from the gate and connects it instead to ground via an equivalent resistance of 100 Ω.

The failure can be detected by monitoring the voltage at the Input pin, which will be

close to ground potential.

Additional features of this device are ESD protection according to the Human Body model

and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).

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