VN5010AK-E Просмотр технического описания (PDF) - STMicroelectronics
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VN5010AK-E Datasheet PDF : 31 Pages
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Electrical specifications
VN5010AK-E
Table 4.
Symbol
Absolute maximum ratings (continued)
Parameter
Value
Unit
VCSENSE Current sense maximum voltage
VCC-41
V
+VCC
V
Maximum switching energy (single pulse)
EMAX (L=1.25mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(typ.))
609
mJ
Electrostatic discharge (Human Body Model: R=1.5KΩ; C=100pF)
4000
– Input
2000
– Current Sense
VESD – CS_DIS
4000
V
5000
– Output
5000
– VCC
VESD Charge device model (CDM-AEC-Q100-011)
750
V
Tj Junction operating temperature
-40 to 150 °C
Tstg Storage temperature
-55 to 150 °C
Table 5.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction case (max)
Rthj-amb Thermal resistance junction ambient (max)
Max value
0.3
See Figure 29
Unit
°C/W
°C/W
2.2
Electrical characteristics
Values specified in this section are for 8 V< VCC< 36 V; -40 °C< Tj< 150 °C, unless
otherwise stated (for each channel).
Table 6.
Symbol
Power section
Parameter
Test conditions
Min. Typ. Max. Unit
VCC
Operating supply
voltage
VUSD
Undervoltage
shutdown
VUSDhyst
Undervoltage
shutdown hysteresis
RON
On-state resistance
IOUT= 6A; Tj= 25°C
IOUT= 6A; Tj= 150°C
IOUT=6A; VCC=5V;Tj=25°C
Vclamp Clamp voltage
ICC= 20 mA
IS Supply current
Off-state; VCC= 13V; Tj= 25°C;
VIN=VOUT=VSENSE=VCSD=0V
On-state; VCC=13V; VIN=5V; IOUT=0A
4.5 13 36 V
3.5 4.5 V
0.5
V
10 mΩ
20 mΩ
13 mΩ
41 46 52 V
2(1) 5(1) µA
1.5 3 mA
8/31
Doc ID 13218 Rev 7
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