VN820-11-E Просмотр технического описания (PDF) - STMicroelectronics

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производитель

VN820-11-E

High-side driver

STMicroelectronics 

VN820-E

Electrical specifications

Table 7. Input pin

Symbol

Parameter

VIL

IIL

VIH

IIH

Vhyst

Input low-level

Low-level input current

Input high-level

High-level input current

Input hysteresis voltage

VICL Input clamp voltage

Test conditions

VIN = 1.25 V

VIN = 3.25 V

IIN = 1m A

IIN = -1m A

Min. Typ. Max. Unit

1.25 V

1

µA

3.25

V

10 µA

0.5

V

6

6.8 8

V

- 0.7

V

Table 8.

Symbol

VCC output diode

Parameter

VF

Forward on voltage

Test conditions

- IOUT = 2 A; Tj = 150 °C

Min. Typ. Max. Unit

-

- 0.6 V

Table 9.

Symbol

Status pin

Parameter

Test conditions

Min. Typ. Max. Unit

VSTAT Status low output voltage ISTAT = 1.6 mA

0.5 V

ILSTAT Status leakage current

Normal operation; VSTAT = 5 V

10 µA

CSTAT Status pin input capacitance Normal operation; VSTAT = 5 V

100 pF

VSCL Status clamp voltage

ISTAT = 1m A

ISTAT = - 1m A

6 6.8 8 V

- 0.7

V

Table 10. Protections(1)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

TTSD

TR

Thyst

tSDL

Ilim

Vdemag

Shutdown temperature

Reset temperature

Thermal hysteresis

Status delay in overload

condition

Tj > Tjsh

Current limitation

Turn-off output clamp

voltage

9 V < VCC < 36 V

5.5 V < VCC < 36 V

IOUT = 3 A;

VIN = 0V;

L = 6 mH

150

175

200 °C

135

°C

7

15

°C

20 ms

9

13

20

A

20

A

VCC - 41 VCC - 48 VCC - 55 V

1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related

diagnostic signals must be used together with a proper software strategy. If the device operates under

abnormal conditions this software must limit the duration and number of activation cycles.

Doc ID 10890 Rev 8

11/44

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