DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VDS8616A8A Просмотр технического описания (PDF) - A-Data Technology

Номер в каталоге
Компоненты Описание
производитель
VDS8616A8A
A-Data
A-Data Technology A-Data
VDS8616A8A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
V-Data
VDS8616A8A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, Vout
-0.3 ~VDD+0.3
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-0.3 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1
W
Short circuit current
IOUT
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Condition
Voltage referenced to Vss = 0V, TA = 0 to 70
Parameter
Symbol
Min
Typ
Supply voltage
VDD, VDDQ
3.0
3.3
Input logic high voltage
VIH
2.0
3.0
Input logic low voltage
VIL
-0.3
-
Note : 1. VIH (max)=Vcc/ VccQ+1.2V for pulse width 5ns acceptable.
2.VIL(min)=-Vss/ VssQ-1.2V for pulse width 5ns acceptable.
Max
Unit
3.6
V
VDD+0.3
V
0.8
V
Note
2
2
AC Operating Condition
Voltage referenced to Vss = 0V, TA = 0 to 70
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
VIH / VIL
2.4 / 0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
TR / tF
2
Ns
Output timing measurement reference level
Voutfef
1.4
V
Output load capacitance for access time measurement
CL
50
pF
2
Note: 1. 3.15V VDD 3.6V is applied for VDS8616A8A55.
2. Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF). For details,
refer to AC/DC output load circuit.
Rev 1.0 December, 2001
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]