VBO50 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
VBO50 Datasheet PDF : 2 Pages
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VBO 50
200
1:TVJ= 150°C
[A]
2:TVJ= 25°C
150
I-I-FF-S(-MO-V-)
1.6
1.4
IFSM (A)
TVJ=45°C TVJ=150°C
750
670
4
10
A2s
TVJ=45°C
100
50
IF
1
2
0
0.5 1 1.5 2 2.5
VF[V]
Fig. 1 Forward current versus
voltage drop per diode
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
3
10
TVJ=150°C
2
10
1
2
46
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode or thyristor
100
[W] PSB 55
80
60
40
20
PVTOT
0
10
IFAVM
85
TC
90
0.6 0.35 = RTHCA [K/W]
0.85
95
100
105
1.35
110
115
120
2.35
125
DC
sin.180°
rec.120°
rec.60°
rec.30°
5.35
30
0
50
[A] Tamb
130
135
140
145
°C
150
100
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient temperature
4
K/W
70
[A]
50
DC
sin.180°
rec.120°
rec.60°
.30°
30
10
IdAV
0
Fig.5
50 100 150 200
TC(°C)
Maximum forward current
at case temperature
3
Z thJK
Z thJC
2
1
Zth
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
2-2
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