5962F-0422701QXA(2004) Просмотр технического описания (PDF) - Aeroflex Corporation

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производитель

5962F-0422701QXA
(Rev.:2004)

UT8CR512K32 16 Megabit SRAM

Aeroflex Corporation 

DATA RETENTION CHARACTERISTICS (Pre-Radiation)3 (VDD2 = VDD2 (min), 1 Sec DR Pulse)

SYMBOL

PARAMETER

MINIMUM MAXIMUM UNIT

VDR

VDD1 for data retention

IDDR 1

Data retention current

Device Type 1

1.0

1.0

-55°C

--

25°C

125°C

--

V

600

µA

600

µA

30

mA

IDDR 1

Data retention current

Device Type 2

-40°C

--

25°

125°C

600

µA

600

µA

30

mA

tEFR1,2

Chip deselect to data retention time

0

0

ns

tR1,2

Operation recovery time

tAVAV

tAVAV

ns

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.

1. EN = VDD2 all other inputs = VDD2 or VSS

2. VDD2 = 0 volts to VDD2 (max)

VDD1

1.7V

DATA RETENTION MODE

VDR > 1.0V

1.7V

VIN >0.7VDD2 CMOS

EN

VIN <0.3VDD2 CMOS

tEFR

tR

VSS

VDD2

Figure 5. Low VDD Data Retention Waveform

188 ohms

1.4V

CMOS

VDD2-0.05V

0.0V

90%

10%

50pF

< 2ns

Input Pulses

Notes:

1. 50pF including scope probe and test socket.

2. Measurement of data output occurs at the low to high or high to low transition mid-point

(i.e., CMOS input = VDD2/2).

Figure 6. AC Test Loads and Input Waveforms

< 2ns

11

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