UT23P09(2012) Просмотр технического описания (PDF) - Unisonic Technologies

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UT23P09
(Rev.:2012)

-23A, -100V P-CHANNEL POWER MOSFET

Unisonic Technologies 

UT23P09

Preliminary

POWER MOSFET

„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=-250µA

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ Reference to 25°C, ID=-1mA

Drain-Source Leakage Current

IDSS

VDS=-100V, VGS=0V

VDS=-80V, VGS=0V, TJ=150°C

Forward

Gate-Source Leakage Current Reverse

IGSS

VGS=20V, VDS=0V

VGS=-20V, VDS=0V

ON CHARACTERISTICS

Static Drain-Source On-Resistance

RDS(ON) VGS=-10V, ID=-11A (Note 5)

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=-250µA

DYNAMIC PARAMETERS

Input Capacitance

CISS

Output Capacitance

COSS VGS=0V, VDS=-25V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

QG

QGS

ID=-11A, VDS=-80V, VGS=-10V,

(Note 5)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=-50V, ID=-11A, RG=5.1Ω

RD=4.2Ω, (Note 5)

Fall Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body Diode Continuous

Source Current

IS

Maximum Body-Diode Pulsed Current

(Note 2)

ISM

Drain-Source Diode Forward Voltage

VSD

TJ=25°C, IS=-11A, VGS=0V

(Note 5)

Body Diode Reverse Recovery Time

tRR

TJ=25°C, IF=-11A, di/dt=-100A/µs

(Note 5)

Body Diode Reverse Recovery Charge

QRR

Note: 5. Pulse width≤300µs; duty cycle≤2%.

MIN

-100

-2.0

TYP MAX UNIT

V

-0.11

V/°C

-25 µA

-250 µA

100 nA

-100 nA

0.117 Ω

-4.0 V

1300

pF

400

pF

240

pF

97 nC

15 nC

51 nC

15

ns

67

ns

51

ns

51

ns

-23 A

-76 A

-1.6 V

150 220 ns

830 1200 nC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-844.a

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