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UT120N03L

120A, 30V N-CHANNEL POWER MOSFET

Unisonic Technologies 

UT120N03

Preliminary

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=250µA, VGS=0V, TC=25°C

Breakdown Voltage Temperature

Coefficient

△BVDSS/△TJ Reference to 25°C, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=30V, VGS=0V

Gate- Source Leakage Current Forward

Reverse

IGSS

VGS=+20V, VDS=0V

VGS=-20V, VDS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=35A

VGS=4.5V, ID=35A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

CISS

COSS

VGS=0V, VDS=25V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=5V, VDS=15V, ID=35A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=15V, ID=35A, RG=4.7Ω,

VGS=5V (Note 1, 2)

Fall-Time

tF

Gate Resistance

Rg

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=120A, VGS=0V

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

30

V

mV/°C

1 μA

0.02 100 nA

-0.02 -100 nA

1.0

3.0 V

3.8 mΩ

6.4 mΩ

2990

pF

585

pF

340

pF

54 72 nC

8.0

nC

10

nC

9

ns

96

ns

47

ns

37

ns

2.0

Ω

1.25 V

120 A

480 A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-581.a

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