BR211-140 Просмотр технического описания (PDF) - Philips Electronics
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BR211-140 Datasheet PDF : 7 Pages
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Philips Semiconductors
Breakover diodes
Product specification
BR211 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-e
Rth j-a
Zth j-a
Rth e-tp
Rth e-a
Rth tp-a
Thermal resistance junction to
envelope
Thermal resistance junction to mounted as fig:12
ambient
Thermal impedance junction to tp = 1 ms
ambient
Thermal resistance envelope to lead length = 5 mm
tie point
lead length = 10 mm
Thermal resistance envelope to lead length = 5 mm
ambient
lead length = 10 mm
Thermal resistance tie point to mounted as fig:12
ambient
mounted with 1 cm2 copper
laminate per lead.
mounted with 2.25 cm2 copper
laminate per lead
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VTM1
V(BR)
V(BO)
On-state voltage
Avalanche voltage (min)
Breakover voltage (max)
CONDITIONS
ITM = 2 A
I(BR) = 10mA
I ≤ IS, tp = 100 µs
BR211-140
BR211-160
BR211-180
BR211-200
BR211-220
BR211-240
BR211-260
BR211-280
SIH(2br)
Temperature coefficient of V(BR)
Holding current
Tj = 25˚C
IISD34
Switching current
Off-state current
Tj = 70˚C
tp = 100 µs
VD = 85% V(BR)min, Tj = 70˚C
MIN. TYP. MAX. UNIT
-
22
- K/W
- 105
K/W
- 2.62 - K/W
-
15
- K/W
-
30
- K/W
- 440 - K/W
- 350 - K/W
-
70
- K/W
-
55
- K/W
-
45
- K/W
MIN. TYP. MAX. UNIT
-
-
2.5 V
123 140 157 V
140 160 180 V
158 180 202 V
176 200 224 V
193 220 247 V
211 240 269 V
228 260 292 V
246 280 314 V
V
V
- +0.1 - %/K
150 -
-
mA
100 -
-
mA
10 200 1000 mA
-
-
10 µA
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Illuminance ≤ 500 lux (daylight); relative
humidity < 65%.
August 1996
2
Rev 1.200
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