BR211-140 Просмотр технического описания (PDF) - Philips Electronics

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BR211-140

Breakover diodes

Philips Electronics 

Philips Semiconductors

Breakover diodes

Product specification

BR211 series

GENERAL DESCRIPTION

A range of bidirectional, breakover

diodes in an axial, hermetically

sealed, glass envelope. These

devices feature controlled breakover

voltage and high holding current

together with high peak current

handling capability. Typical

applications include transient

overvoltage

protection

in

telecommunications equipment.

OUTLINE - SOD84

QUICK REFERENCE DATA

SYMBOL PARAMETER

V(BO)

IH

ITSM

BR211-140 to 280

Breakover voltage

Holding current

Non-repetitive peak current

MIN.

140

150

-

SYMBOL

MAX. UNIT

280 V

-

mA

40

A

XXX denotes voltage grade

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

VD

Continuous voltage

ITSM1

ITSM2

I2t

dIT/dt

Ptot

PTM

Tstg

Ta

Tvj

Non repetitive peak current

Non repetitive on-state current

I2t for fusing

Rate of rise of on-state current

after V(BO) turn-on

Continuous dissipation

Peak dissipation

Storage temperature

Operating ambient temperature

Overload junction temperature

10/320 µs impulse equivalent to

10/700 µs, 1.6 kV voltage impulse

(CCITT K17)

half sine wave; t = 10 ms;

Tj = 70 ˚C prior to surge

tp = 10 ms

tp = 10 µs

Ta = 25˚C

tp = 1 ms; Ta = 25˚C

off-state

on-state

MIN.

-

-

-

-

-

-

-

-65

-

-

MAX.

75% of

V(BO)typ

40

UNIT

V

A

15

A

1.1

A2s

50

A/µs

1.2

W

50

W

150

˚C

70

˚C

150

˚C

August 1996

1

Rev 1.200

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