F740L Просмотр технического описания (PDF) - Unisonic Technologies

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производитель

F740L

10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET

Unisonic Technologies 

UF740

ELECTRICAL CHARACTERISTICS(Cont.)

SOURCE TO DRAIN DIODE SPECIFICATIONS

Source to Drain Diode Voltage

(Note 1)

VSD TJ = 25℃, ISD = 10A, VGS = 0V

Continuous Source to Drain

Modified MOSFET

D

Current

IS

Symbol Showing

Pulse Source to Drain Current

(Note 2)

the Integral

Reverse P-N

Junction Diode

ISM

G

S

Reverse Recovery Time

Reverse Recovery Charge

tRR TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs

QRR TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs

NOTES:

1. Pulse Test: Pulse width ≤ 300µs, Duty Cycle≤2%.

2. Repetitive rating: Pulse width limited by maximum junction temperature.

3. VDD = 50V, starting TJ = 25℃, L = 3.37mH, RG = 25Ω, peak IAS = 10A.

MOSFET

2.0 V

10 A

40 A

170 390 790 ns

1.6 4.5 8.2 µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-078,A

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