F740L Просмотр технического описания (PDF) - Unisonic Technologies
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F740L Datasheet PDF : 6 Pages
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UF740
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, Unless Otherwise Specified)
PARAMETER
Drain to Source Voltage (TJ =25℃~125℃)
Drain to Gate Voltage (RGS = 20kΩ) (TJ =25℃~125℃)
Gate to Source Voltage
Drain Current
Continuous
TC = 100℃
Pulsed
Maximum Power Dissipation
Derating above 25℃
SYMBOL
VDS
VDGR
VGS
ID
ID
IDM
PD
RATINGS
400
400
±20
10
6.3
40
125
1.0
UNIT
V
V
V
A
A
A
W
W/℃
Single Pulse Avalanche Energy Rating
(VDD=50V, starting TJ =25℃, L=9.1µH, RG=25Ω, peak IAS = 10A)
EAS
520
mJ
Operating Temperature Range
TOPR
-55 ~ +150
℃
Storage Temperature Range
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SYMBOL
θJA
θJc
RATINGS
62.5
1.0
ELECTRICAL CHARACTERISTICS (TC =25℃, Unless Otherwise Specified.)
UNIT
℃/W
PARAMETER
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS VGS = 0V, ID = 250µA
400
V
VGS(THR) VGS = VDS, ID = 250µA
2.0
ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V
10
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125℃
IGSS VGS = ±20V
4.0 V
A
25 µA
250 µA
±500 nA
RDS(ON) VGS = 10V, ID = 5.2A
0.47 0.55 Ω
gFS VDS ≥ 50V, ID = 5.2A
5.8 8.9
S
tDLY(ON)
tR
tDLY(OFF)
tF
QG(TOT)
QGS
QGD
CISS
COSS
CRSS
VDD = 200V, ID ≈ 10A,
RGS = 9.1Ω, RL = 20Ω, VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 10A
VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
VGS = 0V, VDS =25V, f = 1.0MHz
15 21 ns
25 41 ns
52 75 ns
25 36 ns
41 63 nC
6.5
nC
23
nC
1250
pF
300
pF
80
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-078,A
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