UB20BCT-E3-8W Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

UB20BCT-E3-8W

Dual Common Cathode Ultrafast Plastic Rectifier

Vishay Semiconductors 

www.vishay.com

U20xCT-E3, UB20xCT-E3

Vishay General Semiconductor

Dual Common Cathode Ultrafast Plastic Rectifier

TO-220AB

U20xCT

PIN 1

PIN 3

3

2

1

PIN 2

CASE

TO-263AB

K

2

1

UB20xCT

PIN 1

PIN 2

K

HEATSINK

PRIMARY CHARACTERISTICS

IF(AV)

2 x 10 A

VRRM

100 V to 200 V

IFSM

trr

100 A

26 ns

VF at IF = 10 A

0.834 V

TJ max.

150 °C

Package

TO-220AB, TO-263AB

Diode variation

Dual Common Cathode

FEATURES

• Power pack

• Oxide planar chip junction

• Ultrafast recovery time

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s per

JESD 22-B106 (for TO-220AB package)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

power supplies, freewheeling diodes, DC/DC converters or

polarity protection specifically for DCM application.

MECHANICAL DATA

Case: TO-220AB, TO-263AB

Molding compound meets UL 94V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Max. repetitive peak reverse voltage

VRRM

total device

Max. average forward rectified current (fig. 1)

per diode

IF(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load per diode

IFSM

Electrostatic discharge capacitor voltage,

human body model: C = 150 pF, R = 1.5 k(contact mode)

VC

Operating junction and storage temperature range

TJ, TSTG

U(B)20BCT

100

U(B)20CCT

150

20

10

100

8

-55 to +150

U(B)20DCT

200

UNIT

V

A

A

kV

°C

Revision: 30-Oct-13

1

Document Number: 89017

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: