TSM2N60 Просмотр технического описания (PDF) - TSC Corporation
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TSM2N60 Datasheet PDF : 8 Pages
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TSM2N60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
TO-251 / TO-252
TO-220
TO-251 / TO-252
Thermal Resistance - Junction to Ambient
TO-220
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VGS = 0V, ID = 250uA
VGS = 10V, ID = 1A
VDS = VGS, ID = 250uA
VDS = 600V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 40V, ID = 1A
IS = 2A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSS
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 400V, ID = 2A,
VGS = 10V
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
Reverse Transfer Capacitance
Crss
Switching c
Turn-On Delay Time
td(on)
Turn-On Rise Time
VGS = 10V, ID = 2A,
tr
Turn-Off Delay Time
VDD = 300V, RG = 18Ω
td(off)
Turn-Off Fall Time
tf
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Limit
2.87
2.32
110
62.5
Min Typ
600
--
--
4.4
2.0
--
--
--
--
--
--
5
--
--
--
13
--
2
--
6
--
435
--
56
--
9.2
--
12
--
21
--
30
--
24
Unit
oC/W
oC/W
Max Unit
--
V
5
Ω
4.0
V
10
uA
± 100 nA
--
S
1.6
V
22
--
nC
--
--
--
pF
--
--
--
nS
--
--
2/8
Version: E11
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