TSM2N60 Просмотр технического описания (PDF) - TSC Corporation
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TSM2N60 Datasheet PDF : 8 Pages
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TSM2N60
600V N-Channel Power MOSFET
TO-220
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600
5 @ VGS =10V
ID (A)
1
General Description
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a
fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Block Diagram
Ordering Information
Part No.
TSM2N60CP RO
TSM2N60CH C5
TSM2N60CZ C0
Package
TO-252
TO-251
TO-220
Packing
2.5Kpcs/ 13” Reel
75pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a,b
IS
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
EAS
Maximum Power Dissipation @ Tc = 25oC
TO-251 / TO-252
TO-220
PDTOT
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
TJ, TSTG
Limit
600
±30
2
9
1
20
70
70
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
oC
oC
1/8
Version: E11
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