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TPM2323-30 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TPM2323-30
MICROWAVE POWER GaAs FET
Toshiba
TPM2323-30 Datasheet PDF : 5 Pages
1
2
3
4
5
TPM2323-30
Absolute Maximum Ratings (T
a
= 25
°
C)
Characteristic
Symbol
Drain Source Voltage
V
DS
Gate Source Voltage
V
GS
Drain Current
I
D
Total Power Dissipation (Tc = 25
°
C)
P
T
Channel Temperature
T
ch
Storage Temperature
T
stg
Package Outline (2-16G1B)
Unit
Rating
V
15
V
-5
A
26
W
100
˚
C
175
˚
C
-65~175
Handling Precautions for Packaged Type
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260
°
C.
2/5
MW40040196
TOSHIBA CORPORATION
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