AT52BR1674T-85CI Просмотр технического описания (PDF) - Atmel Corporation

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производитель

AT52BR1674T-85CI

16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory

Atmel Corporation 

Features

• 16-Mbit Flash and 2-Mbit/4-Mbit SRAM

• Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package

• 2.7V to 3.3V Operating Voltage

Flash

• 2.7V to 3.3V Read/Write

• Access Time – 85 ns

• Sector Erase Architecture

– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

• Fast Word Program Time – 20 µs

• Fast Sector Erase Time – 300 ms

• Dual-plane Organization, Permitting Concurrent Read While Program/Erase

– Memory Plane A: Eight 4K Word and Seven 32K Word Sectors

– Memory Plane B: Twenty-four 32K Word Sectors

• Erase Suspend Capability

– Supports Reading and Programming from Any Sector by Suspending Erase of a

Different Sector

– Supports Reading Any Word by Suspending Programming of Any Other Word

• Low-power Operation

– 30 mA Active

– 10 µA Standby

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• VPP Pin for Accelerated Program/Erase Operations

• RESET Input for Device Initialization

• Sector Lockdown Support

• Top/Bottom Block Configuration

• 128-bit Protection Register

SRAM

• 2-megabit (128K x 16)/4-megabit (256K x 16)

• 2.7V to 3.3V VCC Operating Voltage

• 70 ns Access Time

• Fully Static Operation and Tri-state Output

• 1.2V (Min) Data Retention

• Industrial Temperature Range

16-megabit

Flash and

2-megabit/

4-megabit

SRAM Stack

Memory

AT52BR1672(T)

AT52BR1674(T)

Preliminary

Device Number

AT52BR1672(T)

AT52BR1674(T)

Flash Plane

Architecture

12M + 4M

12M + 4M

Flash

Configuration

16M (1M x 16)

16M (1M x 16)

SRAM

Configuration

2M (128K x 16)

4M (256K x 16)

Rev. 2604B–STKD–09/02

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