STPS30170DJF-TR Просмотр технического описания (PDF) - STMicroelectronics
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STPS30170DJF-TR Datasheet PDF : 9 Pages
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STPS30170DJF
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
32 PF(AV)(W)
28
24
δ= 0.2
δ= 0.1
20
δ = 0.05
16
12
8
4
IF(AV)(A)
0
0
5
10
15
20
δ= 0.5
δ= 1
T
δ=tp/T
tp
25
30
35
40
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
35 IF(AV)(A)
30
Rth(j-a)=Rth(j-c)
25
20
15
10
T
5
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100
125
150
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj= 125 °C)
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
Zth(j-c)/ Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 5. Reverse leakage current versus reverse voltage
applied (typical values)
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
Tj = 25 °C
VR(V)
20 4 0 60 80 100 120 140 160 180
Figure 6. Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
1000
100
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
10
1
V R (V)
10
100
1000
DS6587 - Rev 5
page 3/9
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