STPS30170DJF-TR(2011) Просмотр технического описания (PDF) - STMicroelectronics
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STPS30170DJF-TR Datasheet PDF : 7 Pages
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Characteristics
STPS30170DJF
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values)
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values)
1.E+02 IR(mA)
C(pF)
1000
1.E+01
Tj = 150 °C
1.E+00
Tj = 125 °C
Tj = 100 °C
1.E-01
100
Tj = 75 °C
1.E-02
Tj = 50 °C
1.E-03
Tj = 25 °C
1.E-04
VR(V)
10
0
20 40 60 80 100 120 140 160 180
1
10
F = 1 MHz
Vosc = 30 mVRMS
T = 25 °C
j
VR(V)
100
1000
Figure 9. Forward voltage drop versus
forward current
Figure 10. Thermal resistance, junction to
ambient, versus copper surface
under tab
60 IFM(A)
55
50
45
40
35
Tj = 125 °C
(Maximum values)
Rth(j-a)(°C/W)
250
200
150
epoxy printed board Fr4,
copper thickness=35 µm
30
Tj = 125 °C
25
(Typical values)
100
20
15
50
10
Tj = 25 °C
(Maximum values)
5
0
VFM(V)
0
Scu(cm²)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
1
2
3
4
5
6
7
8
9 10
4/7
Doc ID 16749 Rev 3
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